GeSn heterostructure micro-disk laser operating at 230 K
نویسندگان
چکیده
منابع مشابه
GeSn/Ge heterostructure short-wave infrared photodetectors on silicon.
A surface-illuminated photoconductive detector based on Ge0.91Sn0.09 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2µm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can b...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2018
ISSN: 1094-4087
DOI: 10.1364/oe.26.032500